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参数资料
| 型号： | MRF6V2010NBR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 12/21页 |
| 文件大小： | 1668K |
| 描述： | IC MOSFET RF N-CHAN TO272-2 |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 220MHz |
| 增益： | 23.9dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 30mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 110V |
| 封装/外壳： | TO-272BC |
| 供应商设备封装： | TO-272-2 |
| 包装： | 标准包装 |
| 其它名称： | MRF6V2010NBR1DKR |
2
RF Device Data
Freescale Semiconductor
MRF6V2010NR1 MRF6V2010NBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
10
μAdc
Drain--Source Breakdown Voltage
(ID
=5mA,VGS
=0Vdc)
V(BR)DSS
110
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
50
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
2.5
mA
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
=28μAdc)
VGS(th)
1
1.68
3
Vdc
Gate Quiescent Voltage
(VDD
=50Vdc,ID
= 30 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.68
3.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=70mAdc)
VDS(on)
?
0.26
?
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
0.13
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
7.3
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
16.3
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
=30mA,Pout
=10W,f=220MHz,CW
Power Gain
Gps
22.5
23.9
25.5
dB
Drain Efficiency
ηD
58
62
?
%
Input Return Loss
IRL
?
-- 1 4
-- 9
dB
ATTENTION: The MRF6V2010N and MRF6V2010NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING SYSTEM DESIGN
to
ensure proper mounting of these devices.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V2010NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 10W Latrl N-Ch. Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2010 Series 450 MHz 10 W 50 V N-Channel RF Power MOSFET - TO-272 |
| MRF6V2010NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2010NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2150N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
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