参数资料
型号: MRF6V2010NBR1
厂商: Freescale Semiconductor
文件页数: 3/21页
文件大小: 1668K
描述: IC MOSFET RF N-CHAN TO272-2
标准包装: 1
晶体管类型: LDMOS
频率: 220MHz
增益: 23.9dB
电压 - 测试: 50V
额定电流: 2.5mA
电流 - 测试: 30mA
功率 - 输出: 10W
电压 - 额定: 110V
封装/外壳: TO-272BC
供应商设备封装: TO-272-2
包装: 标准包装
其它名称: MRF6V2010NBR1DKR
MRF6V2010NR1 MRF6V2010NBR1
11
RF Device Data
Freescale Semiconductor
f = 450 MHz Zsource
Zo
=50?
f = 220 MHz Zsource
f = 130 MHz Zsource
f=64MHzZload
f=64MHzZsource
f = 130 MHz Zload
f = 220 MHz Zload
f = 450 MHz Zload
VDD
=50Vdc,IDQ
=30mA,Pout
=10WCW
f
MHz
Zsource
?
Zload
?
64
37.5 + j15.1
94.5 + j16.7
130
26.7 + j21.3
83.8 + j35.0
220
20.0 + j25.4
75.0 + j44.0
450
7.70 + j21.0
43.0 + j49.0
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Figure 18. Series Equivalent Source and Load Impedance
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
相关PDF资料
PDF描述
FMAC-0956-H312I FMAC INPUT FILTER 3-PHASE 250A
FMAC-0956-H310 FMAC INPUT FILTER 3-PHASE 250A
FMAD-0955-H210 FMAD INPUT FILTER 180A
150103J1000DC CAP FILM 10000PF 1KVDC AXIAL
MC18FA301G-TF CAP MICA 300PF 100V 2% 1812
相关代理商/技术参数
参数描述
MRF6V2010NBR5 功能描述:射频MOSFET电源晶体管 VHV6 10W Latrl N-Ch. Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V2010NBR5-CUT TAPE 制造商:Freescale 功能描述:MRF6V2010 Series 450 MHz 10 W 50 V N-Channel RF Power MOSFET - TO-272
MRF6V2010NR1 功能描述:射频MOSFET电源晶体管 VHV6 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V2010NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6V2150N 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs