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参数资料
| 型号： | MRF6V2300NBR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/19页 |
| 文件大小： | 1185K |
| 描述： | MOSFET RF N-CH 50V TO-272-4 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 220MHz |
| 增益： | 25.5dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 900mA |
| 功率 - 输出： | 300W |
| 电压 - 额定： | 110V |
| 封装/外壳： | TO-272BB |
| 供应商设备封装： | TO-272 WB-4 |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MRF6V2300NBR5DKR |
18
RF Device Data
Freescale Semiconductor
MRF6V2300NR1 MRF6V2300NBR1
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2007
?
Initial Release of Data Sheet
1
Feb. 2007
?
Added Fig. 1, Pin Connections, p. 1
?
Removed footnote references listed for Operating Junction Temperature, Table 1, Maximum Ratings, p. 1
?
Added Max value to Power Gain, Table 5, Functional Tests, p. 2
2
May 2007
?
Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4,
C19, C5, C18, C9, C12, C14, and C23, p. 3
3
Jan. 2008
?
Increased operating frequency to 600 MHz, p. 1
?
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
?
Corrected Ciss
test condition to indicate AC stimulus on the VGS
connection versus the VDS
connection,
Dynamic Characteristics table, p. 2
?
Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3
?
Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4
on Sheet 1.
?
Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and
Pin 2 designations.
4
Dec. 2008
?
Added Typical Performances table for 27 MHz, 450 MHz applications, p. 2
?
Added Figs. 16 and 17, Test Circuit Component Layout -- 27 MHz and 450 MHz, and Tables 7 and 8, Test
Circuit Component Designations and Values -- 27 MHz and 450 MHz, p. 9, 10
?
Added Fig. 18, Series Equivalent Source and Load Impedance for 27 MHz, 450 MHz, p. 11
5
Apr. 2010
?
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
?Continuous use at maximum temperature will affect MTTF? footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
?
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 18
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V2300NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
| MRF6V2300NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2300NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2300NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
| MRF6V2300NR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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