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| 型号： | MRF6V2300NBR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 12/19页 |
| 文件大小： | 1185K |
| 描述： | MOSFET RF N-CH 50V TO-272-4 |
| 产品培训模块： | RF Broadcast Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 220MHz |
| 增益： | 25.5dB |
| 电压 - 测试： | 50V |
| 额定电流： | 2.5mA |
| 电流 - 测试： | 900mA |
| 功率 - 输出： | 300W |
| 电压 - 额定： | 110V |
| 封装/外壳： | TO-272BB |
| 供应商设备封装： | TO-272 WB-4 |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MRF6V2300NBR5DKR |
2
RF Device Data
Freescale Semiconductor
MRF6V2300NR1 MRF6V2300NBR1
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
2.5
mA
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
50
μAdc
Drain--Source Breakdown Voltage
(ID
= 150 mA, VGS
=0Vdc)
V(BR)DSS
110
?
?
Vdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 800
μAdc)
VGS(th)
1
1.63
3
Vdc
Gate Quiescent Voltage
(VDD
=50Vdc,ID
= 900 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.6
3.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=2Adc)
VDS(on)
?
0.28
?
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
2.88
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
120
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
268
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 900 mA, Pout
= 300 W, f = 220 MHz, CW
Power Gain
Gps
24
25.5
27
dB
Drain Efficiency
ηD
66
68
?
%
Input Return Loss
IRL
?
-- 1 6
-- 9
dB
Typical Performances
(In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) VDD
=50Vdc,IDQ
= 900 mA, Pout
= 300 W CW
Power Gain f = 27 MHz
f = 450 MHz
Gps
?
?
31.4
21.7
?
?
dB
Drain Efficiency f = 27 MHz
f = 450 MHz
ηD
?
?
61.5
59.1
?
?
%
Input Return Loss f = 27 MHz
f = 450 MHz
IRL
?
?
--17.4
--24.4
?
?
dB
ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting)
PRIOR TO STARTING SYSTEM DESIGN
to
ensure proper mounting of these devices.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V2300NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
| MRF6V2300NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V2300NR1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6V2300NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF6V2300N Series 10 - 600 MHz 300 W 50 V N-Channel Single-Ended RF Power MOSFET |
| MRF6V2300NR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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