- 您现在的位置：买卖IC网 > PDF目录98039 > MRF6V3090NBR5 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 PDF资料下载
参数资料
| 型号： | MRF6V3090NBR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB-4 |
| 文件页数： | 1/17页 |
| 文件大小： | 928K |
| 代理商： | MRF6V3090NBR5 |
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast
applications.
Typical DVB--T OFDM Performance: VDD =50 Volts,IDQ = 350 mA,
Pout = 18 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM, Input Signal
PAR = 9.5 dB @ 0.01% Probability on CCDF.
Power Gain — 22.0 dB
Drain Efficiency — 28.5%
ACPR @ 4 MHz Offset — --62.0 dBc @ 4 kHz Bandwidth
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Input Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Excellent Thermal Stability
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 18 W CW,
50 Vdc, IDQ = 350 mA
Case Temperature 80°C, 90 W CW,
50 Vdc, IDQ = 350 mA
RθJC
0.79
0.82
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V3090N
Rev. 0, 4/2010
Freescale Semiconductor
Technical Data
470--860 MHz, 90 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
PARTS ARE SINGLE--ENDED
(Top View)
RFout/VDS
Figure 1. Pin Connections
RFout/VDS
RFin/VGS
Note: Exposed backside of the package is
the source terminal for the transistor.
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6V3090NBR1(NBR5)
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6V3090NR1(NR5)
MRF6V3090NR1
MRF6V3090NR5
MRF6V3090NBR1
MRF6V3090NBR5
Freescale Semiconductor, Inc., 2010. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF6V4300NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF6V4300NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF6VP121KHR6 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP121KHSR6 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6VP21KHR6 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF6V3090NBR5-CUT TAPE | 制造商:Freescale 功能描述:MRF Series 470 - 860 MHz 90 W 50 V N-Channel Enhancement-Mode Lateral MOSFET |
| MRF6V3090NR1 | 功能描述:射频MOSFET电源晶体管 VHV6 860MHz 90W TO 270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V3090NR5 | 功能描述:射频MOSFET电源晶体管 VHV6 860MHz 90W TO 270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V4300NBR1 | 功能描述:射频MOSFET电源晶体管 VHV6 300W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF6V4300NBR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。