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参数资料
| 型号： | MRF8HP21080HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件页数： | 1/14页 |
| 文件大小： | 528K |
| 代理商： | MRF8HP21080HSR3 |
MRF8HP21080HR3 MRF8HP21080HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28 Volts,
IDQA = 150 mA, VGSB =1.1 Vdc, Pout = 16 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
14.1
46.7
8.3
--30.6
2140 MHz
14.5
46.2
8.2
--32.1
2170 MHz
14.4
45.7
8.1
--33.6
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point
100 Watts (1)
Features
Advanced High Performance In--Package Doherty
Production Tested in a Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 13.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 13.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (2,3)
TJ
225
°C
CW Operation @ TC =25°C
Derate above 25°C
CW
220
3.3
W
W/°C
1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8HP21080H
Rev. 0, 6/2011
Freescale Semiconductor
Technical Data
2110--2170 MHz, 16 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8HP21080HR3
MRF8HP21080HSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8HP21080HSR3
CASE 465M--01, STYLE 1
NI--780--4
MRF8HP21080HR3
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42 RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
Carrier
Peaking
Freescale Semiconductor, Inc., 2011. All rights reserved.
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相关代理商/技术参数 |
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| MRF8HP21080HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21130HR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21130HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21130HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21130HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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