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参数资料
| 型号： | MRF8HP21080HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件页数： | 8/14页 |
| 文件大小： | 528K |
| 代理商： | MRF8HP21080HSR3 |
MRF8HP21080HR3 MRF8HP21080HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Typical Broadband Performance (1) — (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 150 mA, VGSB =1.1 Vdc,
Pout = 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
14.1
46.7
8.3
--30.6
--17
2140 MHz
14.5
46.2
8.2
--32.1
--17
2170 MHz
14.4
45.7
8.1
--33.6
--18
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 150 mA, VGSB =1.1 Vdc,
2110--2170 MHz Bandwidth
Characteristic
Symbol
Min
Typ
Max
Unit
Pout @ 1 dB Compression Point, CW
P1dB
—
60
—
W
Pout @ 3 dB Compression Point (2)
P3dB
—
100
—
W
IMD Symmetry @ 10 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
40
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
78
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =16 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(--30°Cto+85°C)
G
—
0.012
—
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
P1dB
—
0.01
—
dB/°C
1. Measurement made with device in a Doherty configuration.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
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| MRF8HP21080HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21130HR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21130HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21130HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21130HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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