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参数资料
| 型号： | MRF8P23080HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN |
| 文件页数： | 10/15页 |
| 文件大小： | 645K |
| 代理商： | MRF8P23080HR3 |
4
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
Figure 2. MRF8P23080HR3(HSR3) Test Circuit Component Layout
MRF8P23080H
Rev. 1
C10
VGA
Z1
CUT
OUT
A
REA
VGB
C6
C5
C4
C2
C3
C9
C8
R1
C12 C11
C1
C7
VDB
C21
C22
C23
C13
C19
C14
C20
C15
C16
C17
VDA
C24
C18
C
P
Table 5. MRF8P23080HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C7
0.8 pF Chip Capacitors
ATC600F0R8JT250XT
ATC
C2, C8, C13, C19
1.0 pF Chip Capacitors
ATC600F1R0JT250XT
ATC
C3, C9
18 pF Chip Capacitors
ATC600F180JT250XT
ATC
C4, C5, C10, C11
8.2 pF Chip Capacitors
ATC600F8R2JT250XT
ATC
C6, C12, C16, C22
1.0 μF, 50 V Chip Capacitors
GRM21BR71H105KA12L
Murata
C14, C20
10 pF Chip Capacitors
ATC600F100JT250XT
ATC
C15, C21
5.6 pF Chip Capacitors
ATC600F5R6JT250XT
ATC
C17, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C18, C24
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
R1
50 , 1/4 W Chip Resistor
CRCW120650R0FKEA
Vishay
Z1
2500 MHz Band 90°, 3 dB Chip Hybrid Coupler
GSC356--HYB2500
Soshin
PCB
0.020″, εr =3.5
RO4350B
Rogers
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8P23080HR5 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HSR3 | 功能描述:射频MOSFET电源晶体管 RF FET V8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23080HSR5 | 功能描述:射频MOSFET电源晶体管 RF FET HV8 2.3GHZ 80W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23160WHR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P23160WHR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.3GHz 160W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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