参数资料
型号: MRF8P23080HR3
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN
文件页数: 13/15页
文件大小: 645K
代理商: MRF8P23080HR3
MRF8P23080HR3 MRF8P23080HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
--10
--20
9
15
0
60
50
40
30
20
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
G
ps
,P
OWER
GAIN
(d
B)
14
13
10
100
10
--60
AC
PR
(d
Bc)
12
11
10
0
--30
--40
--50
Figure 8. Broadband Frequency Response
0
18
2050
f, FREQUENCY (MHz)
VDD =28 Vdc
Pin =0 dBm
IDQA = 280 mA
VGSB =0.7 Vdc
12
9
6
2125
GAIN
(d
B)
15
Gain
2200
2275
2350
2425
2500
2575
2650
3
VDD =28 Vdc,IDQA = 280 mA, VGSB =0.7 Vdc
2300 MHz
2350 MHz
2400 MHz
2300 MHz
2350 MHz
2400 MHz
ηD
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24
6
8
PR
OBABIL
ITY
(%
)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
--60
--100
10
(dB
)
--20
--30
--40
--50
--70
--80
--90
3.84 MHz
Channel BW
7.2
1.8
5.4
3.6
0
--1.8
--3.6
--5.4
--9
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
--7.2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
--10
0
13
5
7
9
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