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参数资料
| 型号： | MRF8P23080HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN |
| 文件页数： | 8/15页 |
| 文件大小： | 645K |
| 代理商： | MRF8P23080HR3 |
2
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 72°C, 16 W CW, 28 Vdc, IDQA = 280 mA, VGSB = 0.7 V, 2300 MHz
Case Temperature 80°C, 80 W CW(3),28Vdc,IDQA = 280 mA, VGSB = 0.7 V, 2300 MHz
RθJC
0.89
0.55
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics (4)
Gate Threshold Voltage
(VDS =10 Vdc, ID =75 μAdc)
VGS(th)
1.0
1.8
2.5
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, IDA = 280 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.6
3.4
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =0.75 Adc)
VDS(on)
0.1
0.23
0.3
Vdc
Functional Tests (5,6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 280 mA, VGSB =0.7 Vdc, Pout =16 W Avg.,
f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
on 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
13.5
14.6
18.5
dB
Drain Efficiency
ηD
38.0
42.0
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.0
6.7
—
dB
Adjacent Channel Power Ratio
ACPR
—
--29.5
--27.0
dBc
Typical Broadband Performance (6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 280 mA, VGSB =0.7 Vdc,
Pout = 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz
14.6
42.0
6.7
--29.5
2350 MHz
14.7
41.6
6.8
--31.5
2400 MHz
14.6
41.4
6.6
--32.5
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration
(continued)
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