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参数资料
| 型号： | MRF8P29300HR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 12/16页 |
| 文件大小： | 1010K |
| 代理商： | MRF8P29300HR5 |
MRF8P29300HR6 MRF8P29300HSR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
32
1
1000
08
4
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
12
Ciss
10
16
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
100
20
24
28
Note: Each side of device measured separately.
60
35
55
54
53
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Output Power versus
Input Power
56
52
51
37
38
39
40
41
44
P out
,O
UT
PU
T
POWER
(d
Bm)
P3dB = 55.16 dBm (328 W)
Actual
Ideal
P2dB = 54.82 dBm (303 W)
50
VDD =30 Vdc,IDQ = 100 mA, f = 2900 MHz
Pulse Width = 300 μsec, Duty Cycle = 10%
57
58
59
P1dB = 54.19 dBm (263 W)
42
43
15
30
20
100
14.5
14
55
45
35
25
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
500
Gps
13
12
13.5
12.5
11.5
50
40
30
VDD =30 Vdc
IDQ = 100 mA
f = 2900 MHz
Pulse Width = 300 μsec
Duty Cycle = 10%
Figure 7. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
VDD =24 V
10
16
0
15
26 V
14
30 V
100
400
32 V
13
12
11
28 V
IDQ = 100 mA, f = 2900 MHz
Pulse Width = 300 μsec
Duty Cycle = 10%
200
300
12
16
0
15
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
100
14
IDQ = 100 mA
400
1000 mA
13
200 mA
500 mA
VDD =30 Vdc
f = 2900 MHz
Pulse Width = 300 μsec
Duty Cycle = 10%
200
300
9
17
20
15
55
100
50
40
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
15
500
25_C
TC =--30_C
30
13
11
VDD =30 Vdc,IDQ = 100 mA, f = 2900 MHz
Pulse Width = 300 μsec, Duty Cycle = 10%
Gps
--30_C
25_C
85_C
16
14
12
10
20
25
35
45
85_C
45
36
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相关代理商/技术参数 |
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|---|---|
| MRF8P29300HR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HSR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HR5 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HR6 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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