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参数资料
| 型号： | MRF8P29300HR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 9/16页 |
| 文件大小： | 1010K |
| 代理商： | MRF8P29300HR5 |
2
RF Device Data
Freescale Semiconductor
MRF8P29300HR6 MRF8P29300HSR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =30 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS =10 Vdc, ID = 345 μAdc)
VGS(th)
1.0
1.9
2.5
Vdc
Gate Quiescent Voltage (2)
(VDD =30 Vdc, ID = 100 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.3
3.0
Vdc
Drain--Source On--Voltage (1)
(VGS =10 Vdc, ID =2 Adc)
VDS(on)
0.1
0.18
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =30 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
2.53
—
pF
Output Capacitance
(VDS =30 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
470
—
pF
Input Capacitance
(VDS =30 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
264
—
pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.),
f = 2900 MHz, 100 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
12.0
13.3
15.0
dB
Drain Efficiency
ηD
47.0
50.5
—
%
Input Return Loss
IRL
—
--17
--9
dB
Typical Pulsed RF Performance (In Freescale 2″x3″ Compact Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 100 mA, Pout = 320 W
Peak (32 W Avg.), 300 μsec Pulse Width, 10% Duty Cycle
Frequency
Gps
(dB)
ηD
(%)
IRL
(dB)
2700 MHz
13.9
49.3
--11
2800 MHz
14.0
49.8
--18
2900 MHz
13.0
49.6
--15
1. Each side of device measured separately.
2. Measurement made with device in push--pull configuration.
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| MRF8P29300HR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HSR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HR5 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HR6 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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