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参数资料
| 型号： | MRF8P29300HR5 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 2/16页 |
| 文件大小： | 1010K |
| 代理商： | MRF8P29300HR5 |
10
RF Device Data
Freescale Semiconductor
MRF8P29300HR6 MRF8P29300HSR6
TYPICAL CHARACTERISTICS — 2″x3″ COMPACT TEST FIXTURE
36
55
54
53
Pin, INPUT POWER (dBm) PULSED
Figure 15. Pulsed Output Power versus
Input Power
56
52
51
37
38
39
40
41
44
P out
,O
UT
PU
T
POWER
(d
Bm)
P3dB = 55.4 dBm (347 W)
Actual
Ideal
P2dB = 55 dBm (316 W)
49
VDD =30 Vdc,IDQ = 100 mA, f = 2900 MHz
Pulse Width = 300 μsec, Duty Cycle = 10%
57
58
59
P1dB = 54.3 dBm (269 W)
42
43
15.5
30
20
100
15
14.5
55
45
35
25
Pout, OUTPUT POWER (WATTS) PULSED
Figure 16. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
500
Gps
13.5
12.5
14
13
12
50
40
30
VDD =30 Vdc,IDQ = 100 mA, f = 2900 MHz
Pulse Width = 300 μsec, Duty Cycle = 10%
50
35
34
Figure 17. Pulsed Power Gain, Drain Efficiency
and Input Return Loss versus Frequency
15
f, FREQUENCY (MHz)
12
14
2700
47
53
52
51
50
49
48
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
VDD =30 Vdc,IDQ = 100 mA, Pout = 320 W
Pulse Width = 300 μsec, Duty Cycle = 10%
ηD
IRL
IR
L,
IN
PU
T
RETU
RN
LO
SS
(d
B)
--35
--5
--10
--15
--25
--20
--30
Gps
G
ps
,P
OWER
GAIN
(d
B)
2750
2800
2850
2900
13
12.5
13.5
14.5
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相关代理商/技术参数 |
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| MRF8P29300HR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P29300HSR6 | 功能描述:射频MOSFET电源晶体管 HV8 300W 50V NI1230S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HR5 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8P8300HR6 | 功能描述:射频MOSFET电源晶体管 HV8-800 28V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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