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参数资料
| 型号： | MRF8S18260HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/14页 |
| 文件大小： | 505K |
| 描述： | MOSFET RF N-CH 260W NI1230-8 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 1.81GHz |
| 增益： | 17.9dB |
| 电压 - 测试： | 30V |
| 电流 - 测试： | 1.6A |
| 功率 - 输出： | 74W |
| 电压 - 额定： | 65V |
| 封装/外壳： | SOT-1110A |
| 供应商设备封装： | NI1230-8 |
| 包装： | 带卷 (TR) |
MRF8S18260HR6 MRF8S18260HSR6
13
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
?
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2010
?
Initial Release of Data Sheet
1
Feb. 2012
?
Table 3, ESD Protection Characteristics, removed the word ?Minimum? after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be
used as a guideline when handling ESD sensitive
devices, p. 2
?
Replaced Case Outline 375I--03, Issue B with 375I--04, Issue C, p. 1, 9, 10. On Sheet 2, changed
dimension F in mm from 0.1--0.18 to 0.10--0.18, changed dimension U in mm from 0.89--1.02 to 0.89--1.14,
changed dimension W3 in mm from 12.47--12.72 to 12.47--12.73.
?
Replaced Case Outline 375J--02, Issue A with 375J--03, Issue B, p. 1, 11, 12. On Sheet 2, changed
dimension A in mm from 32.13--32.38 to 32.13--32.39, changed dimension F in mm from 0.1--0.18 to
0.10--0.18, changed dimension U in mm from 8.89--11.43 to 0.89--1.14.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF8S18260HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 260W NI1230S8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S18260HSR6 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 260W NI1230S8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S19140HR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S19140HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S19140HS | 制造商:Freescale Semiconductor 功能描述: |
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