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参数资料
| 型号： | MRF8S18260HR6 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/14页 |
| 文件大小： | 505K |
| 描述： | MOSFET RF N-CH 260W NI1230-8 |
| 标准包装： | 150 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 1.81GHz |
| 增益： | 17.9dB |
| 电压 - 测试： | 30V |
| 电流 - 测试： | 1.6A |
| 功率 - 输出： | 74W |
| 电压 - 额定： | 65V |
| 封装/外壳： | SOT-1110A |
| 供应商设备封装： | NI1230-8 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18260HR6 MRF8S18260HSR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
(1)
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 400
μAdc)
VGS(th)
1.1
1.9
2.6
Vdc
Gate Quiescent Voltage
(VDS
=30Vdc,ID
= 1600 mA)
VGS(Q)
?
2.6
?
Vdc
Fixture Gate Quiescent Voltage
(VDD
=30Vdc,ID
= 1600 mA, Measured in Functional Test)
VGG(Q)
4.3
5.1
5.8
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=4Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Functional Tests
(1,2)
(In Freescale Test Fixture, 50 ohm system) VDD
=30Vdc,IDQ
= 1600 mA, Pout
= 74 W Avg., f = 1805 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
16.8
17.9
19.0
dB
Drain Efficiency
ηD
29.0
31.6
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.4
6.0
?
dB
Adjacent Channel Power Ratio
ACPR
?
--35.0
--32.0
dBc
Input Return Loss
IRL
?
-- 1 9
-- 7
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=30Vdc,IDQ
= 1600 mA, Pout
= 74 W Avg., Single--Carrier
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth
@
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
17.9
31.6
6.0
--35.0
-- 1 9
1840 MHz
17.9
31.9
6.0
--36.0
-- 1 8
1880 MHz
17.9
32.5
5.9
--36.0
-- 8
1. Gates (Pins 2, 3) and drains (Pins 6, 7) are connected internally.
2. Part internally matched both on input and output.
(continued)
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相关代理商/技术参数 |
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|---|---|
| MRF8S18260HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 260W NI1230S8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S18260HSR6 | 功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 260W NI1230S8 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S19140HR3 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S19140HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2GHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8S19140HS | 制造商:Freescale Semiconductor 功能描述: |
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