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参数资料
| 型号： | MRF9120R3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-860, CASE 375B-04, 4 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 301K |
| 代理商： | MRF9120R3 |
5-284
Freescale Semiconductor
Wireless RF Product Device Data
MRF9120R3 MRF9120LR3
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 865 to 895 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applications
in 26 volt base station equipment.
Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA
IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 26 Watts
Power Gain — 16 dB
Efficiency — 26%
Adjacent Channel Power —
750 kHz: -45 dBc @ 30 kHz BW
1.98 MHz: -60 dBc @ 30 kHz BW
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.45
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 8, 12/2004
Freescale Semiconductor
Technical Data
CASE 375B-04, STYLE 1
NI-860
MRF9120R3
MRF9120LR3
880 MHz, 120 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF9130L | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130LR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130LSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9135L | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF9135LR3 | 功能描述:射频MOSFET电源晶体管 RF PWR LDMOS NI-780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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