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参数资料
| 型号： | MRFE6S8046NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 10/17页 |
| 文件大小： | 439K |
| 描述： | MOSFET RF N-CH 45W TO-270-4 |
| 标准包装： | 500 |
| 晶体管类型： | LDMOS |
| 频率： | 894MHz |
| 增益： | 19.8dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 300mA |
| 功率 - 输出： | 35.5W |
| 电压 - 额定： | 66V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | * |
2
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 35.5 W CW, 28 Vdc, IDQ
= 300
mA
Case Temperature 82°C, 18 W CW, 28 Vdc, IDQ
= 285
mA
RθJC
1.7
1.9
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 66 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 100
μAdc)
VGS(th)
1
2.3
3
Vdc
Gate Quiescent Voltage
(VDD
= 28 Vdc, I
D
= 300 mAdc, Measured in Functional Test)
VGS(Q)
2
3
4
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 1 Adc)
VDS(on)
0.1
0.3
0.4
Vdc
Functional Tests (3,4)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, P
out
= 35.5 W CW, I
DQ
= 300 mA, f = 894
MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Power Gain
Gps
17.5
19.8
21.5
dB
Drain Efficiency
ηD
54
57.7
?
%
Input Return Loss
IRL
?
-17
-7
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part internally matched both on input and output.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
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相关代理商/技术参数 |
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| MRFE6S9045GNR1 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 45W TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9045N | 制造商:Freescale Semiconductor 功能描述: |
| MRFE6S9045NR1 | 功能描述:射频MOSFET电源晶体管 HV6E 45W NI270-2 FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET |
| MRFE6S9046GNR1 | 功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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