参数资料
型号: MRFE6S8046NR1
厂商: Freescale Semiconductor
文件页数: 8/17页
文件大小: 439K
描述: MOSFET RF N-CH 45W TO-270-4
标准包装: 500
晶体管类型: LDMOS
频率: 894MHz
增益: 19.8dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 300mA
功率 - 输出: 35.5W
电压 - 额定: 66V
封装/外壳: TO-270AB
供应商设备封装: TO-270 WB-4
包装: *
16
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
PRODUCT DOCUMENTATION
Refer to the following documents, tools and software to aid your design process.
Application Notes
?
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
?
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
?
AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the
Software & Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2009
?
Initial Release of Data Sheet
相关PDF资料
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MRFE6S9045NR1 MOSFET RF N-CH 10W TO-270-2
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相关代理商/技术参数
参数描述
MRFE6S9045GNR1 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 45W TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9045N 制造商:Freescale Semiconductor 功能描述:
MRFE6S9045NR1 功能描述:射频MOSFET电源晶体管 HV6E 45W NI270-2 FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9045NR1-CUT TAPE 制造商:Freescale 功能描述:MRFE6S9045 Series 880 MHz 10 W 28 V N-Channel RF Power MOSFET
MRFE6S9046GNR1 功能描述:射频MOSFET电源晶体管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray