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参数资料
| 型号： | MRFE6S9130HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 5/11页 |
| 文件大小： | 413K |
| 代理商： | MRFE6S9130HSR3 |
MRFE6S9130HR3 MRFE6S9130HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRFE6S9130HR3(SR3) Test Circuit Schematic
Z14
0.045″ x 0.220″ Microstrip
Z15
0.755″ x 0.080″ Microstrip
Z16
0.496″ x 0.080″ Microstrip
Z17
0.384″ x 0.080″ Microstrip
PCB
Arlon CuClad 250GX-0300-55-22,
0.030″, εr = 2.55
Z1
0.383″ x 0.080″ Microstrip
Z2
1.250″ x 0.080″ Microstrip
Z3
0.190″ x 0.220″ Microstrip
Z4
0.127″ x 0.220″ Microstrip
Z5
0.173″ x 0.220″ Microstrip
Z6, Z11
0.200″ x 0.220″ x 0.620″ Taper
Z7
0.220″ x 0.630″ Microstrip
Z8
0.077″ x 0.630″ Microstrip
Z9
0.146″ x 0.630″ Microstrip
Z10
0.152″ x 0.630″ Microstrip
Z12
0.184″ x 0.220″ Microstrip
Z13
0.261″ x 0.220″ Microstrip
Z1
RF
INPUT
C1
C2
Z2
Z3
Z4
Z5
Z6
C4
C5
DUT
Z8
Z9
C9
C8
Z10
C10
C11
C12
C13
RF
OUTPUT
C3
Z7
Z11 Z12
Z13
Z14
Z15
Z16
Z17
C6
C7
B1
B2
VBIAS
L1
L2
C14
C15 C16 C17 C18 C19
VSUPPLY
+
Table 5. MRFE6S9130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair Rite
C1, C13, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C2
8.2 pF Chip Capacitor
ATC100B8R2BT500XT
ATC
C3, C11
0.8-8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C4, C5
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C6
20 K pF Chip Capacitor
ATC200B203KT50XT
ATC
C7, C16, C17, C18
10 μF, 35 V Tantalum Chip Capacitors
T491D106K035AT
Kemet
C8, C9
10 pF Chip Capacitors
ATC100B7R5JT500XT
ATC
C10
11 pF Chip Capacitor
ATC100B110JT500XT
ATC
C12
0.6-4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C15
0.56 μF, 50 V Chip Capacitor
C1825C564J5GAC
Kemet
C19
470 μF, 63 V Electrolytic Capacitor
ESME630ELL471MK25S
United Chemi-Con
L1, L2
12.5 nH Inductors
A04T-5
Coilcraft
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9130HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9135HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9135HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9135HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9135HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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