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参数资料
| 型号： | MRFE6S9130HSR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件页数： | 8/11页 |
| 文件大小： | 413K |
| 代理商： | MRFE6S9130HSR3 |
6
RF Device Data
Freescale Semiconductor
MRFE6S9130HR3 MRFE6S9130HSR3
TYPICAL CHARACTERISTICS
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
0
TWOTONE SPACING (MHz)
VDD = 28 Vdc, Pout = 130 W (PEP)
IDQ = 950 mA, TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
IM3U
20
30
40
50
160
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
0
80
Pout, OUTPUT POWER (WATTS) CW
60
20
40
30
40
20
50
60
1
10
100
10
40
60
P6dB = 52.95 dBm (197.24 W)
Pin, INPUT POWER (dBm)
55
54
52
50
33
32
35
34
36
Actual
Ideal
P3dB = 52.26 dBm (168.27 W)
51
53
31
400
14
21
1
0
70
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 950 mA
f = 880 MHz
100
10
19
18
17
16
15
60
40
30
20
10
Gps
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
η
D
,DRAIN
EFFICIENCY
(%)
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
P
out
,OUTPUT
POWER
(dBm)
ηD
Gps
G
ps
,POWER
GAIN
(dB)
50
70
ηD
ACPR
10
200
50
IM3L
IM5L
IM5U
IM7U
IM7L
56
57
58
59
37
38
39
P1dB = 51.15 dBm
(130.31 W)
VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW
12
μsec(on), 1% Duty Cycle, f = 880 MHz
AL
T1,
CHANNEL
POWER
(dBc)
VDD = 28 Vdc, IDQ = 950 mA, f = 880 MHz
NCDMA IS95, Pilot, Sync, Paging
Traffic Codes 8 Through 13
ALT1
TC = 30_C
25
_C
85
_C
20
TC = 30_C
25
_C
85
_C
30
_C
25
_C
85
_C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9130HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 130W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9135HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9135HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9135HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9135HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 135W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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