参数资料
型号: MRFE6S9200HSR3
厂商: Freescale Semiconductor
文件页数: 5/11页
文件大小: 393K
描述: MOSFET RF N-CH 58W 28V NI-880S
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 250
晶体管类型: LDMOS
频率: 880MHz
增益: 21dB
电压 - 测试: 28V
额定电流: 10µA
电流 - 测试: 1.4A
功率 - 输出: 58W
电压 - 额定: 66V
封装/外壳: NI-880S
供应商设备封装: NI-880S
包装: 带卷 (TR)
MRFE6S9200HR3 MRFE6S9200HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRFE6S9200HR3(SR3) Test Circuit Schematic
Z19 0.074″
x 0.669
x 0.707
Taper
Z20 0.074″
x 0.524
x 0.595
Taper
Z21 0.058″
x 0.474
x 0.488
Taper
Z22 0.326″
x 0.491
Microstrip
Z23 0.708″
x 0.220
Microstrip
Z24 0.555″
x 0.080
Microstrip
Z25 0.356″
x 0.080
Microstrip
PCB Arlon CuClad 250GX-0300-55-22,
0.030″, εr
= 2.55
Z1 0.351″
x 0.080
Microstrip
Z2 0.538″
x 0.080
Microstrip
Z3 0.424″
x 0.080
Microstrip
Z4 0.052″
x 0.220
Microstrip
Z5 0.414″
x 0.220
Microstrip
Z6 0.052″
x 0.491
Microstrip
Z7 0.140″
x 0.491
Microstrip
Z8 0.244″
x 0.736
x 0.980
Taper
Z9 0.119″
x 0.118
Microstrip
Z10 0.305″
x 0.980
Microstrip
Z11, Z12 2.134″
x 0.070
Microstrip
Z13, Z14 1.885″
x 0.100
Microstrip
Z15 0.100″
x 1.090
Microstrip
Z16 0.212″
x 1.090
Microstrip
Z17 0.083″
x 0.962
x 1.036
Taper
Z18 0.074″
x 0.816
x 0.888
Taper
INPUT
Z1
RF
C1
C20
Z2
Z3
Z4
Z5
Z6
DUT
Z8
Z15
C8
C9
C10
C21
C6
RF
OUTPUT
Z7
Z16
Z17
Z18
Z19
Z20
Z25
C2
B1
VBIAS
C4
C22
C23
C32
C28
C34
VSUPPLY
+
+
C7
Z9
Z10
R3
R2
Z11
C26
C30
R1
Z12
C3
B2
R4
C27
C31
C13
C15
C11
C12
C14
C17
C16
C19
C18
Z21
Z22
Z23
Z24
Z13
+
+
C5
C25
C24
C33
C29
+
Z14
Table 5. MRFE6S9200HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Small Ferrite Beads, Surface Mount
2743019447
Fair Rite
C1, C2, C3, C4, C5, C6
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C7
2.7 pF Chip Capacitor
ATC100B2R7JT500XT
ATC
C8, C9, C18, C19
1.3 pF Chip Capacitors
ATC100B1R3JT500XT
ATC
C10, C11
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C12, C13
4.3 pF Chip Capacitors
ATC100B4R3JT500XT
ATC
C14, C15, C16, C17
3.3 pF Chip Capacitors
ATC100B3R3JT500XT
ATC
C20
0.6-4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C21
0.8-8.0 pF Variable Capacitor, Gigatrim
27291SL
Johanson
C22, C23, C24, C25
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C26, C27
10 μF, 35 V Tantalum Chip Capacitors
T491C106K035AT
Kemet
C28, C29
22 μF, 35 V Tantalum Chip Capacitors
T491C226K035AT
Kemet
C30, C31, C32, C33
0.1 μF Chip Capacitors
CDR33Bx104AKYS
Kemet
C34
330 μF, 63 V Electrolytic Capacitor
EKMG630ELL331MJ205
United Chemi-Con
R1, R2, R3, R4
10 Ω, 1/4 W Chip Resistors
CRCW120610R0FKEA
Vishay
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MRFE6S9201HR3 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9201HR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9201HSR3 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9201HSR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray