- 您现在的位置：买卖IC网 > PDF目录98043 > MRFE6S9201HR3 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRFE6S9201HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CASE 465-06, NI-780, 3 PIN |
| 文件页数： | 10/13页 |
| 文件大小： | 487K |
| 代理商： | MRFE6S9201HR3 |
6
RF Device Data
Freescale Semiconductor
MRFE6S9201HR3 MRFE6S9201HSR3
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
25
0
5
10
15
960
800
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 40 Watts Avg.
940
920
900
880
860
840
820
12
22
21
20
19
18
17
16
65
40
35
30
25
40
45
50
55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
VDD = 28 Vdc, Pout = 40 W (Avg.)
IDQ = 1400 mA, NCDMA IS95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
15
14
13
20
60
20
ALT1
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
25
0
5
10
15
960
800
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout = 84 Watts Avg.
940
920
900
880
860
840
820
12
22
21
20
19
18
17
16
50
30
20
30
40
45
50
55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
15
14
13
35
60
20
ALT1
Figure 5. Two-Tone Power Gain versus
Output Power
100
23
1
IDQ = 2100 mA
Pout, OUTPUT POWER (WATTS) PEP
700 mA
1050 mA
22
21
20
10
400
G
ps
,POWER
GAIN
(dB)
19
18
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
1
IDQ = 700 mA
Pout, OUTPUT POWER (WATTS) PEP
1050 mA
100
20
30
40
400
70
50
10
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
VDD = 28 Vdc, Pout = 84 W (Avg.)
IDQ = 1400 mA, NCDMA IS95 Pilot
Sync, Paging, Traffic Codes 8 Through 13
1400 mA
1750 mA
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
60
VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
1750 mA
1400 mA
2100 mA
40
相关PDF资料 |
PDF描述 |
|---|---|
| MRFE6S9205HSR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6S9205HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6VP5600HSR6 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6VP5600HR6 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRFE6VP5600HR5 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6S9201HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9201HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9201HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。