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参数资料
| 型号： | MRFE6S9201HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, CASE 465-06, NI-780, 3 PIN |
| 文件页数： | 11/13页 |
| 文件大小： | 487K |
| 代理商： | MRFE6S9201HR3 |
MRFE6S9201HR3 MRFE6S9201HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
0
1
100
40
10
20
60
7th Order
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 880 MHz, f2 = 880.1 MHz
TwoTone Measurements
5th Order
3rd Order
400
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
10
60
IM3U
20
40
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
50
30
IM3L
IM5U
IM5L
IM7L
10
Figure 9. Pulsed CW Output Power versus
Input Power
63
Pin, INPUT POWER (dBm)
Actual
Ideal
62
P
out
,OUTPUT
POWER
(dBm)
29
P6dB = 54.86 dBm (306.2 W)
VDD = 28 Vdc, Pout = 200 W (PEP), IDQ = 1400 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
80
100
IM7U
61
60
59
58
57
56
55
54
53
52
51
30
31
32
33
34
35
36
37
38
39
40
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW
12
μsec(on), 1% Duty Cycle, f = 880 MHz
P3dB = 54.18 dBm (261.82 W)
P1dB = 53.21 dBm
(209.41 W)
Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
0
90
Pout, OUTPUT POWER (WATTS) AVG.
70
20
40
30
50
20
60
10
70
ηD
Gps
TC = 30_C
ACPR
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
VDD = 28 Vdc, IDQ = 1400 mA
f = 880 MHz, NCDMA IS95 (Pilot
Sync, Paging, Traffic Codes 8
Through 13)
AL
T1,
CHANNEL
POWER
(dBc)
ACPR,
ADJACENT
CHANNEL
POWER
RA
TIO
(dBc)
1
100
300
25
_C
85
_C
30
_C
25
_C
85
_C
50
60
80
30
25
_C
85
_C
ALT1
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相关代理商/技术参数 |
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|---|---|
| MRFE6S9201HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9201HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9201HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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