参数资料
型号: MRFE6S9201HR3
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: ROHS COMPLIANT, CASE 465-06, NI-780, 3 PIN
文件页数: 8/13页
文件大小: 487K
代理商: MRFE6S9201HR3
4
RF Device Data
Freescale Semiconductor
MRFE6S9201HR3 MRFE6S9201HSR3
Figure 1. MRFE6S9201HR3(HSR3) Test Circuit Schematic
Z1
0.227″ x 0.065” Microstrip
Z2
0.938″ x 0.065” Microstrip
Z3
0.492″ x 0.065” Microstrip
Z4
0.046″ x 0.300″ Microstrip
Z5
0.094″ x 0.300″ Microstrip
Z6
0.141″ x 0.546″ x 0.300″ Taper
Z7
0.076″ x 0.734″ x 0.546″ Taper
Z8
0.023″ x 0.780″ x 0.734″ Taper
Z9
0.170″ x 0.780″ Microstrip
Z1
RF
INPUT
C1
C43
Z2
Z3
Z4
Z5
Z7
Z12
C9
C8
C11
C38
C39
RF
OUTPUT
Z6
Z13
Z17
Z18
Z19
Z20
Z25
C4
B1
VBIAS
C20
C29
C31
C42
C26
VSUPPLY
+
Z9
R4
C2
R2
C14
C17
C10
C13
C16
C19
C18
C24
C22
Z21
Z22
Z23
Z24
Z10
+
Z11
R1
C6
C7
Z8
B2
R3
C3
+
C5
DUT
Z26
C32
C25
C23
C21
C15
C12
Z16
C41
C40
Z15
Z14
C30
C28
C27
C44
C46
C37
C33
C45
+
C36
C35
C34
Z10, Z11
0.853″ x 0.100″ Microstrip
Z12
0.084″ x 0.780″ Microstrip
Z13
0.086″ x 0.780″ Microstrip
Z14
0.035″ x 0.780″ x 0.709″ Taper
Z15
0.093″ x 0.709″ x 0.499″ Taper
Z16
0.131″ x 0.499″ x 0.286″ Taper
Z17
0.047″ x 0.365″ Microstrip
Z18
0.054″ x 0.365″ Microstrip
Z19
0.020″ x 0.365″ Microstrip
Z20
0.097″ x 0.065″ Microstrip
Z21, Z22
0.050″ x 0.065″ Microstrip
Z23
0.305″ x 0.065″ Microstrip
Z24
0.456″ x 0.065″ Microstrip
Z25
0.357″ x 0.065″ Microstrip
Z26
0.340″ x 0.065″ Microstrip
PCB
Taconic RF-35, 0.030″, εr = 3.5
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相关代理商/技术参数
参数描述
MRFE6S9201HR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9201HSR3 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9201HSR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9205HR3 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9205HR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray