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参数资料
| 型号： | MRFE6S9205HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 404K |
| 代理商： | MRFE6S9205HR3 |
MRFE6S9205HR3 MRFE6S9205HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
400
70
10
1
3rd Order
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
5th Order
7th Order
100
10
60
50
40
30
20
TWOTONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Output Power
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
100
60
1
IM3L
IM7U
IM7L
10
20
30
40
50
10
VDD = 28 Vdc, Pout = 220 W (PEP), IDQ = 1400 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
IM5U
Actual
110
5
1
30
20
50
Ideal
1 dB = 51.81 W
VDD = 28 Vdc, IDQ = 1400 mA
f = 880 MHz, Input PAR = 7.5 dB
3 dB = 99.2 W
ηD
2 dB = 73.12 W
40
50
60
70
80
90
100
045
1
40
2
35
3
30
4
25
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
OUTPUT
COMPRESSION
A
T
THE
0.01%
PROBABILITY
ON
CCDF
(dB)
η
D,
DRAIN
EFFICIENCY
(%)
η
D
400
16
23
1
0
70
Gps
TC = 30_C
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1400 mA
f = 880 MHz
G
ps
,POWER
GAIN
(dB)
η
D
,DRAIN
EFFICIENCY
(%)
30
_C
25
_C
85
_C
22
60
21
50
20
40
19
30
18
20
17
10
100
10
VDD = 28 Vdc, IDQ = 1400 mA
f1 = 875 MHz, f2 = 885 MHz
TwoTone Measurements, 10 MHz Tone Spacing
IM3U
IM5L
25
_C
85
_C
0
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相关代理商/技术参数 |
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| MRFE6S9205HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP100H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors |
| MRFE6VP100HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 100W 50V ISM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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