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参数资料
| 型号： | MRFE6S9205HR3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 404K |
| 代理商： | MRFE6S9205HR3 |
MRFE6S9205HR3 MRFE6S9205HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 865-900 MHz Bandwidth
Video Bandwidth @ 220 W PEP Pout where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW
frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)
VBW
—
10
—
MHz
Gain Flatness in 35 MHz Bandwidth @ Pout = 58 W Avg.
GF
—
0.315
—
dB
Average Deviation from Linear Phase in 35 MHz Bandwidth
@ Pout = 200 W CW
Φ
—
0.59
—
°
Average Group Delay @ Pout = 200 W CW, f = 880 MHz
Delay
—
4.27
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 200 W CW,
f = 880 MHz, Six Sigma Window
ΔΦ
—
26.3
—
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
—
0.016
—
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
—
0.006
—
dBm/°C
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| MRFE6S9205HR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HSR3 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6S9205HSR5 | 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP100H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors |
| MRFE6VP100HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 100W 50V ISM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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