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| 型号： | MRFE6VP5600HR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/13页 |
| 文件大小： | 930K |
| 描述： | FET RF LDMOS DUAL 230MHZ NI1230 |
| 产品培训模块： | RF Power LDMOS Enhanced Ruggedness Solutions |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 230MHz |
| 增益： | 25dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 100mA |
| 功率 - 输出： | 600W |
| 电压 - 额定： | 130V |
| 封装/外壳： | NI-1230 |
| 供应商设备封装： | NI-1230 |
| 包装： | 标准包装 |
| 其它名称： | MRFE6VP5600HR5DKR |
MRFE6VP5600HR6 MRFE6VP5600HSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
?
Typical Performance: VDD
=50Volts,IDQ
= 100 mA
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulsed (100
μsec,
20% Duty Cycle)
600 Peak
230
25.0
74.6
-- 1 8
CW
600 Avg.
230
24.6
75.2
-- 1 7
?
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
?
600 Watts Pulsed Peak Power, 20% Duty Cycle, 100
μsec
Features
?
Unmatched Input and Output Allowing Wide Frequency Range Utilization
?
Device can be used Single--Ended or in a Push--Pull Configuration
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Characterized from 30 V to 50 V for Extended Power Range
?
Suitable for Linear Application with Appropriate Biasing
?
Integrated ESD Protection with Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
RoHS Compliant
?
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +130
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
1667
8.33
W
W/°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 68°C, 600 W Pulsed, 100
μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz
ZθJC
RθJC
0.022
0.12
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRFE6VP5600H
Rev. 1, 1/2011
Freescale Semiconductor
Technical Data
1.8--600 MHz, 600 W CW, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRFE6VP5600HR6
MRFE6VP5600HSR6
(Top View)
GS
31RFout/VDS
Figure 1. Pin Connections
42RFout/VDS
RFin/V
RFin/VGS
CASE 375D--05, STYLE 1
NI--1230
MRFE6VP5600HR6
CASE 375E--04, STYLE 1
NI--1230S
MRFE6VP5600HSR6
PARTS ARE PUSH--PULL
?
Freescale Semiconductor, Inc., 2010--2011.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6VP5600HR5-CUT TAPE | 制造商:Freescale 功能描述:MRFE6VP Series 600 MHz 600 W 50 V N-Channel RF Power MOSFET - CASE 375D-5 |
| MRFE6VP5600HR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP5600HR6_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRFE6VP5600HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP5600HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W 50V NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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