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| 型号： | MRFE6VP6300HSR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 991K |
| 描述： | FET RF N-CH 230MHZ 125V NI780S-4 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 230MHz |
| 增益： | 26.5dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 100mA |
| 功率 - 输出： | 300W |
| 电压 - 额定： | 125V |
| 封装/外壳： | NI-780S-4 |
| 供应商设备封装： | NI-780S-4 |
| 包装： | 带卷 (TR) |
MRFE6VP6300HR3 MRFE6VP6300HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
?
Typical Performance: VDD
=50Volts,IDQ
= 100 mA
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulsed (100
μsec,
20% Duty Cycle)
300 Peak
230
26.5
74.0
-- 1 6
CW
300 Avg.
130
25.0
80.0
-- 1 5
?
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,
at all Phase Angles
?
300 Watts CW Output Power
?
300 Watts Pulsed Peak Power, 20% Duty Cycle, 100
μsec
?
Capable of 300 Watts CW Operation
Features
?
Unmatched Input and Output Allowing Wide Frequency Range Utilization
?
Device can be used Single--Ended or in a Push--Pull Configuration
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Characterized from 30 V to 50 V for Extended Power Range
?
Suitable for Linear Application with Appropriate Biasing
?
Integrated ESD Protection
?
Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
RoHS Compliant
?
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.
?
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +130
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
1050
5.26
W
W/°C
Operating Junction Temperature
(1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
(4)
Pulsed: Case Temperature 75°C, 300 W Pulsed, 100
μsec Pulse Width, 20% Duty Cycle,
50 Vdc, IDQ
= 100 mA, 230 MHz
CW: Case Temperature 87°C, 300 W CW, 50 Vdc, IDQ
= 1100 mA, 230 MHz
ZθJC
RθJC
0.05
0.19
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Same test circuit is used for both pulsed and CW.
Document Number: MRFE6VP6300H
Rev. 1, 7/2011
Freescale Semiconductor
Technical Data
1.8--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRFE6VP6300HR3
MRFE6VP6300HSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRFE6VP6300HSR3
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRFE6VP6300HR3
(Top View)
GS
31RFout/VDS
Figure 1. Pin Connections
42RFout/VDS
RFin/V
RFin/VGS
?
Freescale Semiconductor, Inc., 2010--2011.
All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6VP6300HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP8600H | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs |
| MRFE6VP8600HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230H 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP8600HR6 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230H 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP8600HSR5 | 功能描述:射频MOSFET电源晶体管 VHV6 600W NI1230S 50V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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