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参数资料
| 型号： | MRFE6VP61K25HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/23页 |
| 文件大小： | 895K |
| 描述： | MOSFET RF N-CH 1.25KW NI-1230S |
| 产品培训模块： | RF Power LDMOS Enhanced Ruggedness Solutions |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 230MHz |
| 增益： | 24dB |
| 电压 - 测试： | 50V |
| 电流 - 测试： | 100mA |
| 功率 - 输出： | 1250W |
| 电压 - 额定： | 125V |
| 封装/外壳： | NI-1230S |
| 供应商设备封装： | NI-1230S |
| 包装： | 带卷 (TR) |
Freescale Semiconductor, Inc., 2010--2014. All rights reserved.MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
?
Typical Performance: VDD
=50Volts,IDQ
= 100 mA
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
?D
(%)
Pulse
(100
?sec, 20% Duty Cycle)
1250 Peak
230
24.0
74.0
CW
1250 CW
230
22.9
74.6
Application Circuits
(1)
— Typical Performance
Frequency
(MHz)
Signal Type
Pout
(W)
Gps
(dB)
?D
(%)
27
CW
1300
27
81
40
CW
1300
26
85
81.36
CW
1250
27
84
87.5--108
CW
1100
24
80
144--148
CW
1250
26
78
170--230
DVB--T
225
25
30
352
Pulse
(200
?sec,
20% Duty Cycle)
1250
21.5
66
352
CW
1150
20.5
68
500
CW
1000
18
58
1. Contact your local Freescale sales office for additional information on specific
circuit designs.
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type
VSWR
Pout
(W)
Test
Voltage
Result
230
Pulse
(100
?sec, 20%
Duty Cycle)
> 65:1 at all
Phase Angles
1500 Peak
(3 dB
Overdrive)
50
No Device
Degradation
Features
?
Unmatched Input and Output Allowing Wide Frequency Range Utilization
?
Device can be used Single--Ended or in a Push--Pull Configuration
?
Qualified Up to a Maximum of 50 VDD
Operation
?
Characterized from 30 V to 50 V for Extended Power Range
?
Suitable for Linear Application with Appropriate Biasing
?
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
?
Characterized with Series Equivalent Large--Signal Impedance Parameters
?
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: MRFE6VP61K25H
Rev. 4.1, 3/2014
Freescale Semiconductor
Technical Data
1.8--600 MHz, 1250 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
MRFE6VP61K25HR6
MRFE6VP61K25HR5
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
(Top View)
Gate A
31Drain A
Figure 1. Pin Connections
Gate B
42Drain B
NI--1230H--4S
MRFE6VP61K25HR6/R5
NI--1230S--4S
MRFE6VP61K25HSR5
Note: The backside of the package is the
source terminal for the transistors.
NI--1230GS--4L
MRFE6VP61K25GSR5
?
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFE6VP61K25HSR6 | 功能描述:射频MOSFET电源晶体管 VHV6 1.25KW ISM NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HR3 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HR3_11 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRFE6VP6300HR5 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRFE6VP6300HSR3 | 功能描述:射频MOSFET电源晶体管 VHV6 300W50VISM NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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