参数资料
型号: MRFE6VP8600HSR6
厂商: Freescale Semiconductor
文件页数: 16/20页
文件大小: 1263K
描述: RF FET LDMOS 50V NI1230S
标准包装: 150
晶体管类型: LDMOS(双)
频率: 860MHz
增益: 19.3dB
电压 - 测试: 50V
电流 - 测试: 1.4A
功率 - 输出: 125W
电压 - 额定: 130V
封装/外壳: NI-1230S
供应商设备封装: NI-1230S
包装: 带卷 (TR)
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
5
RF Device Data
Freescale Semiconductor
Figure 3. MRFE6VP8600HR6(HSR6) Test Circuit Schematic ? 860 MHz, DVB--T (8k OFDM)
RF
INPUT
Z1
DUT
Z44
C7
Z23
Z25
COAX1
COAX2
Z35
Z37
C1
Z36
Z38
Z24
Z26
C18
C2
Z21
Z22
VBIAS
VSUPPLY
C12
C13
+
Z2
Z5
Z6
C5
C6
Z7
Z8
C8
Z9
Z10
R1
Z18
R2
C9
C10
VBIAS
Z11
Z13
Z12
Z14
Z46
VSUPPLY
C26
+
RF
Z43
OUTPUT
Z42
COAX3
COAX4
L2
Z17
L3
Z20
Z15
Z16
L1
Z19
C19
C22
Z40
C21
C20
Z39
C11
C25
Z47
Z45
C24
C23
Z41
Z33
Z34
C17
Z31
Z32
C16
Z29
Z30
C15
Z27
Z28
C14
C4
Z4
C3
Z3
Z1 0.204″
x 0.062″
Microstrip
Z2 0.245″
x 0.080″
Microstrip
Z3, Z4 0.445″
x 0.060″
Microstrip
Z5, Z6 0.019″
x 0.100″
Microstrip
Z7, Z8 0.415″
x 0.400″
Microstrip
Z9, Z10 0.083″
x 0.400″
Microstrip
Z11, Z12 0.022″
x 0.400″
Microstrip
Z13, Z14 0.208″
x 0.850″
Microstrip
Z15, Z16 0.242″
x 0.960″
Microstrip
Z17, Z18 0.780″
x 0.080″
Microstrip
Z19*, Z20* 0.354″
x 0.080″
Microstrip
Z21, Z22 0.164″
x 0.520″
Microstrip
Z23, Z24 0.186″
x 0.520″
Microstrip
Z25, Z26 0.088″
x 0.420″
Microstrip
Z27, Z28 0.072″
x 0.420″
Microstrip
Z29, Z30 0.072″
x 0.420″
Microstrip
Z31, Z32 0.259″
x 0.420″
Microstrip
Z33, Z34 0.075″
x 0.420″
Microstrip
Z35, Z36 0.052″
x 0.420″
Microstrip
Z37, Z38 0.211″
x 0.100″
Microstrip
Z39, Z40 0.389″
x 0.060″
Microstrip
Z41 0.070″
x 0.080″
Microstrip
Z42 0.018″
x 0.080″
Microstrip
Z43 0.204″
x 0.062″
Microstrip
Z44*, Z45* 0.850″
x 0.080″
Microstrip
Z46, Z47 0.250″
x 0.080″
Microstrip
* Line length includes microstrip bends
相关PDF资料
PDF描述
MRFG35002N6AT1 TRANS RF 1.5W 6V PWR FET PLD-1.5
MRFG35002N6T1 TRANSISTOR RF FET 3.5GHZ PLD-1.5
MRFG35003ANR5 TRANSISTOR RF 3W 12V PLD-1.5
MRFG35003ANT1 TRANSISTOR RF 3W 12V PLD-1.5
MRFG35003M6T1 MOSFET RF 3.5GHZ 3W 6V 1.5-PLD
相关代理商/技术参数
参数描述
MRFE6VS25GNR1 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V TO270-2G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VS25LR5 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VS25N 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistor
MRFE6VS25NR1 功能描述:射频MOSFET电源晶体管 VHV6E 25W50V TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VS25NR1-CUT TAPE 制造商:Freescale 功能描述:MRFE6VS Series 2000 MHz 25 W 50 V N-Channel RF Power Mosfet - TO-270-2