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参数资料
| 型号： | MRFG35010ANT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 17/25页 |
| 文件大小： | 1043K |
| 描述： | TRANSISTOR RF FET 3.5GHZ PLD-1.5 |
| 标准包装： | 1 |
| 晶体管类型： | pHEMT FET |
| 频率： | 3.55GHz |
| 增益： | 10dB |
| 电压 - 测试： | 12V |
| 额定电流： | 2.9A |
| 电流 - 测试： | 130mA |
| 功率 - 输出： | 9W |
| 电压 - 额定： | 15V |
| 封装/外壳： | PLD-1.5 |
| 供应商设备封装： | PLD-1.5 |
| 包装： | 标准包装 |
| 其它名称： | MRFG35010ANT1DKR |
24
RF Device Data
Freescale Semiconductor, Inc.
MRFG35010ANT1
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
?
.s2p File
?
RF High Power Model
Development Tools
?
Printed Circuit Boards
Reference Designs
?
W--CDMA Reference Design for 2.4--2.5 GHz, 900 mW MRFG35010ANT1 Device
?
725--760 MHz, 1.0 W AVG., 12 V LTE Amplifier Lineup Reference Design
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2006
?
Initial Release of Data Sheet
1
Dec. 2008
?
Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum
channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1
?
Added Table 3, ESD Protection Characteristics, p. 1; renumbered subsequent tables
2
June 2009
?
Modified data sheet to reflect MSL rating change from
1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 1
3
Dec. 2012
?
Added Typical Performance table, p. 1
?
Table 3, ESD Protection Characteristics, removed the word ”Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be
used as a guideline when handling ESD sensitive
devices, p. 1.
?
Added Figs. 8, 15 and 22, Test Circuit Component Layout — 750 MHz, 2140 MHz and 2650 MHz, and
Tables 8, 10 and 12, Test Circuit Component Designations and Values — 750 MHz, 2140 MHz and
2650 MHz, p. 8, 12 and 16
?
Added Figs. 9, 16 and 23, Test Circuit Schematic — 750 MHz, 2140 MHz and 2650 MHz, and Tables 9, 11
and 13, Test Circuit Microstrips — 750 MHz, 2140 MHz and 2650 MHz, p. 9, 13 and 17
?
Added Figs. 10, 17 and 24, Small--Signal Gain versus Frequency — 750 MHz, 2140 MHz and 2650 MHz,
Figs. 11, 18 and 25, Input Return Loss versus Frequency — 750 MHz, 2140 MHz and 2650 MHz, and
Figs. 12, 19 and 26, Output Return Loss versus Frequency — 750 MHz, 2140 MHz and 2650 MHz, p. 10,
14 and 18
?
Added Figs. 13, 20 and 27, Single--Carrier W--CDMA Power Gain and Drain Efficiency versus Output
Power — 750 MHz, 2140 MHz and 2650 MHz, and Figs. 14, 21 and 28, Single--Carrier W--CDMA ACPR
and Input Return Loss versus Output Power — 750 MHz, 2140 MHz and 2650 MHz, p. 11, 15 and 19
4
Aug. 2013
?
Modified data sheet to reflect tape and reel changes for PLD--1.5 package devices as described in Product
and Process Change Notification number, PCN14498, p. 1
?
Updated Fig. 1, MRFG35010ANT1 Test Circuit Component Layout — 3550 MHz, to current test circuit
component layout for MRFG35010ANT1 part, p. 3
相关PDF资料 |
PDF描述 |
|---|---|
| MRFG35010AR1 | TRANSISTOR RF FET 3.5GHZ NI360HF |
| MRFG35010MT1 | MOSFET RF 3.5GHZ 9W 12V 1.5-PLD |
| MRFG35010NT1 | MOSFET RF 3.5GHZ 9W 12V 1.5-PLD |
| MRFG35010R1 | TRANSISTOR RF FET 3.5GHZ NI360HF |
| MRFG35020AR1 | TRANSISTOR RF 20W GAAS NI-360 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFG35010AR1 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010AR5 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010MR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRFG35010MT1 | 功能描述:MOSFET RF 3.5GHZ 9W 12V 1.5-PLD RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35010N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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