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| 型号： | MRFG35010ANT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 18/25页 |
| 文件大小： | 1043K |
| 描述： | TRANSISTOR RF FET 3.5GHZ PLD-1.5 |
| 标准包装： | 1 |
| 晶体管类型： | pHEMT FET |
| 频率： | 3.55GHz |
| 增益： | 10dB |
| 电压 - 测试： | 12V |
| 额定电流： | 2.9A |
| 电流 - 测试： | 130mA |
| 功率 - 输出： | 9W |
| 电压 - 额定： | 15V |
| 封装/外壳： | PLD-1.5 |
| 供应商设备封装： | PLD-1.5 |
| 包装： | 标准包装 |
| 其它名称： | MRFG35010ANT1DKR |
MRFG35010ANT1
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Document Number: MRFG35010ANRF Device Data
Rev. 4, 8/2013Freescale Semiconductor, Inc.
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相关PDF资料 |
PDF描述 |
|---|---|
| MRFG35010AR1 | TRANSISTOR RF FET 3.5GHZ NI360HF |
| MRFG35010MT1 | MOSFET RF 3.5GHZ 9W 12V 1.5-PLD |
| MRFG35010NT1 | MOSFET RF 3.5GHZ 9W 12V 1.5-PLD |
| MRFG35010R1 | TRANSISTOR RF FET 3.5GHZ NI360HF |
| MRFG35020AR1 | TRANSISTOR RF 20W GAAS NI-360 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRFG35010AR1 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010AR5 | 功能描述:射频GaAs晶体管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| MRFG35010MR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRFG35010MT1 | 功能描述:MOSFET RF 3.5GHZ 9W 12V 1.5-PLD RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35010N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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