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| 型号： | MRFG35020AR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/12页 |
| 文件大小： | 728K |
| 描述： | TRANSISTOR RF 20W GAAS NI-360 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 500 |
| 晶体管类型： | pHEMT FET |
| 频率： | 3.5GHz |
| 增益： | 11.5dB |
| 电压 - 测试： | 12V |
| 电流 - 测试： | 300mA |
| 功率 - 输出： | 20W |
| 电压 - 额定： | 15V |
| 封装/外壳： | NI-360 |
| 供应商设备封装： | NI-360 |
| 包装： | 带卷 (TR) |
MRFG35020AR1
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX and WLL base station applications that have a 200 MHz
BW requirement in the 2300--3800 MHz frequency range. Suitable for TDMA and
CDMA amplifier applications. To be used in Class AB applications.
?
Typical WiMAX Performance: VDD
=12Volts,IDQ
= 300 mA, Pout
= 2 Watts
Avg., f = 3500 MHz, 802.16d, 64 QAM
3/4, 4 bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Power Gain ? 11.5 dB
Drain Efficiency ? 22%
RCE ? --33 dB
Meets ETSI Type G Mask
?
20 Watts P1dB @ 3500 MHz, CW
Features
?
Supports up to 28 MHz Bandwidth OFDM Signals
?
Internally Input Matched for Ease of Use
?
High Gain, High Efficiency and High Linearity
?
Excellent Thermal Stability
?
RoHS Compliant
?
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
15
Vdc
Gate--Source Voltage
VGS
-- 5
Vdc
RF Input Power
Pin
34
dBm
Storage Temperature Range
Tstg
--40 to +150
°C
Channel Temperature
(1)
Tch
175
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2)
Unit
Thermal Resistance, Junction to Case
RθJC
2.7
°C/W
1. For reliable operation, the operating channel temperature should not exceed 150°C. Exceeding 150°C channel operating temperature may
result in device performance degradation.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRFG35020A
Rev. 1, 12/2008
Freescale Semiconductor
Technical Data
MRFG35020AR1
3.5GHz,20W,12V
WiMAX
POWER FET
GaAs PHEMT
CASE 360E--01, STYLE 2
NI--360 SHORT LEAD
?
Freescale Semiconductor, Inc., 2008.
All rights reserved.
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