参数资料
型号: MRFG35020AR1
厂商: Freescale Semiconductor
文件页数: 3/12页
文件大小: 728K
描述: TRANSISTOR RF 20W GAAS NI-360
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 500
晶体管类型: pHEMT FET
频率: 3.5GHz
增益: 11.5dB
电压 - 测试: 12V
电流 - 测试: 300mA
功率 - 输出: 20W
电压 - 额定: 15V
封装/外壳: NI-360
供应商设备封装: NI-360
包装: 带卷 (TR)
MRFG35020AR1
11
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
?
Initial Release of Data Sheet
1
Dec. 2008
?
Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for
standardization across products, p. 1
?
Removed ?Operating Case Temperature Range? from Maximum Ratings table so that the maximum
channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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