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| 型号： | MSC1201Y2RHHRG4 |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 33 MHz, MICROCONTROLLER, PQCC36 |
| 封装： | GREEN, PLASTIC, QFN-36 |
| 文件页数： | 28/93页 |
| 文件大小： | 1093K |
| 代理商： | MSC1201Y2RHHRG4 |
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MSC1200
MSC1201
MSC1202
SBAS317E APRIL 2004 REVISED MAY 2006
www.ti.com
34
Unused
Serial Flash
Programming
Mode
Address
User
Application
Mode
Address(1)
Unused
1K Internal Boot ROM
Se
le
c
t
in
HC
R0
0000h, 0k
NOTE: (1) Can be accessed using CADDR
or the faddr_data_read Boot ROM routine.
1FFFh, 8k (Y3)
0FFFh, 4k (Y2)
FC00h
F800h
FFFFh
Program
Memory
03FFh, 1k
13FFh, 5k (Y3)
0BFFh, 3k (Y2)
Data
Memory
OnChip
Flash
OnChip
Flash
UAM: Read Only
SFPM: Read Only
UAM: Read Only
SFPM: Read/Write
807Fh
8000h
8040h
7Fh
00h
40h
Configuration
Memory
Figure 20. Memory Map
It is important to note that the Flash Memory is readable
and writable (depending on the MXWS bit in the MWS
SFR) through the MOVX instruction when configured as
either Program or Data Memory. This flexibility means that
the device can be partitioned for maximum Flash Program
Memory size (no Flash Data Memory) and Flash Program
Memory can be used as Flash Data Memory. However,
this usage may lead to undesirable behavior if the PC
points to an area of Flash Program Memory that is being
used for data storage. Therefore, it is recommended to use
Flash partitioning when Flash Memory is used for data
storage. Flash partitioning prohibits execution of code
from Data Flash Memory. Additionally, the Program
Memory erase/write can be disabled through hardware
configuration bits (HCR0), while still providing access
(read/write/erase) to Data Flash Memory.
The effect of memory mapping on Program and Data
Memory is straightforward. The Program Memory is
decreased in size from the top of Flash Memory. To
maintain compatibility with the MSC121x, the Flash Data
Memory maps to addresses 0400h. Therefore, access to
Data Memory (through MOVX) will access Flash Memory
for the addresses shown in Table 4.
Data Memory
The MSC120x has on-chip Flash Data Memory, which is
readable and writable (depending on the Memory Write
Select register) during normal operation (full VDD range).
This memory is mapped into the external Data Memory
space, which requires the use of the MOVX instruction to
program.
CONFIGURATION MEMORY
The MSC120x Configuration Memory consists of 128
bytes of memory. In UAM, all Configuration Memory is
readable using the faddr_data_read Boot ROM routine or
CADDR register, but none of the Configuration Memory is
writable. In SFPM, all Configuration Memory is readable,
but only the lower 64 bytes (8000h803Fh) are writable;
the upper 64 bytes (8040h807Fh) are not writable.
Note that reading/writing configuration memory in SFPM
requires
16-bit
addressing;
whereas,
reading
configuration memory in UAM requires only 8-bit
addressing.
Lower 64 Bytes
Note that the three hardware configuration registers
(HCR0, HCR1, and HCR2) reside in the lower 64 bytes of
Configuration Memory and are located in SFPM at
addresses 0803Fh, 0803Eh, and 0803Dh, respectively.
Therefore, care should be taken when writing to
Configuration Memory so that user parameters are not
written into these locations.
Also note that if the Enable Program Memory Access bit
(HCR0.7) is cleared, Configuration Memory cannot be
changed unless all memory has been cleared with the
Mass Erase command.
Upper 64 Bytes
Information such as device trim values and device serial
number are located in the upper 64 bytes of Configuration
Memory. The locations 08050h through 08053h contain a
unique 4-byte serial number. The location 8054h contains
the temperature sensor correction value (refer to
application note SBAA126, available for download from
www.ti.com). None of these memory locations can be
altered.
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相关代理商/技术参数 |
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| MSC1201Y2RHHT | 功能描述:模数转换器 - ADC Precision ADC & DAC w/8051 CPU & Flash RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
| MSC1201Y2RHHTG4 | 功能描述:模数转换器 - ADC Precision ADC & DAC w/8051 CPU & Flash RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
| MSC1201Y3 | 制造商:BB 制造商全称:BB 功能描述:Precision, Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) with 8051 Microcontroller and Flash Memory |
| MSC1201Y3RHHR | 功能描述:模数转换器 - ADC Precision ADC & DAC w/8051 CPU & Flash RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
| MSC1201Y3RHHRG4 | 功能描述:模数转换器 - ADC Precision ADC & DAC w/8051 CPU & Flash RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
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