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参数资料
| 型号： | MSC81058 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.250 INCH, HERMETIC SEALED, S010, STRIPAC-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 194K |
| 代理商： | MSC81058 |
October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
EMITTER BALLASTED
.
REFRACTORY/GOLD METALLIZATION
.
VSWR CAPABILITY
∞:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC PACKAGE
.
POUT
= 10 W MIN. WITH 10 dB GAIN
@ 1 GHz
DESCRIPTION
The MSC81058 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone, emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding infinite load VSWR at any
phase angle under rated conditions.
The MSC81058 is designed for Class C amplifier
applications in the 0.4 - 1.2 GHz frequency range.
PIN CONNECTION
BRANDING
81058
ORDER CODE
MSC81058
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
29
W
IC
Device Current*
1.0
A
VCC
Collector-Supply Voltage*
35
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
6.0
°C/W
*Applies only to rated RF amplifier operation
MSC81058
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5
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相关代理商/技术参数 |
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