参数资料
型号: MSP3V3-M3/89A
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 100 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封装: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, MICROSMP, 2 PIN
文件页数: 1/4页
文件大小: 78K
代理商: MSP3V3-M3/89A
Document Number: 88486
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 23-Apr-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
MSP3V3
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units specifically for
protecting 3.3 V supplied sensitive equipment against
transient overvoltages.
FEATURES
Very low profile - typical height of 0.65 mm
Ideal for automated placement
Oxide planar chip junction
Uni-directional polarity only
Peak pulse power: 100 W (10/1000 μs)
ESD capability: 15 kV (air), 8 kV (contact)
Meets MSL level 1, per J-STD-020C, LF maximum peak of
260 °C
AEC-Q101 qualified
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base
P/N-M3
-
halogen-free
and
RoHS
compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1) Non-repetitive current pulse, per fig. 1
(2) Mounted on 6.0 mm x 6.0 mm copper pads to each terminal
PRIMARY CHARACTERISTICS
VWM
3.3 V
PPPM
100 W
IFSM
25 A
TJ max.
150 °C
MicroSMP
eSMPTM Series
Top View
Bottom View
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation
PPPM (1)(2)
100
W
Peak pulse current with a 10/1000 μs waveform (fig. 1)
IPPM
13.7
A
Peak pulse current with a 8/20 μs waveform (fig. 1)
IPPM
75
A
Non repetitive peak forward surge current 8.3 ms single half sine-wave
IFSM (2)
25
A
Power dissipation TL = 120 °C
PD (2)
1.0
W
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
MIN.
BREAKDOWN
VOLTAGE
VBR AT IT
MAX. REVERSE
LEAKAGE
CURRENT
IR AT VWM
MAX. CLAMPING
VOLTAGE AT VC
AT IPPM(10/1000
μs)
MAX. CLAMPING
VOLTAGE AT VC
AT IPPM(8/20 μs)
TYPICAL
TEMPERATURE
COEFFICIENT
OF VBR
TYP. JUNCTION
CAPACITANCE
CJ AT 0 V
(1 MHZ)
VmA
μA
V
A
V
A
(10-4/°C)
pF
MSP3V3
KC
4.1
1.0
200
3.3
7.3
13.7
11.0
75
- 5.3
850
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