参数资料
型号: MSP430F248TRGC
厂商: TEXAS INSTRUMENTS INC
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, QCC64
封装: PLASTIC, QFN-64
文件页数: 63/91页
文件大小: 1246K
代理商: MSP430F248TRGC
MSP430F23x
MSP430F24x(1)
MSP430F2410
SLAS547H
– JUNE 2007 – REVISED AUGUST 2011
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC (PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
1
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
1
7
mA
tCPT
Cumulative program time(1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/Erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
(2)
30
tFTG
tBlock, 0
Block program time for first byte or word
(2)
25
tFTG
Block program time for each additional
tBlock, 1-63
(2)
18
tFTG
byte or word
tBlock, End
Block program end-sequence wait time
(2)
6
tFTG
tMass Erase
Mass erase time
(2)
10593
tFTG
tSeg Erase
Segment erase time
(2)
4819
tFTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the flash controller
's state machine (tFTG = 1/fFTG).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V(RAMh)
RAM retention supply voltage (1)
CPU halted
1.6
V
(1)
This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
JTAG Interface
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
2.2 V
0
5
fTCK
TCK input frequency
See (1)
MHz
3 V
0
10
RInternal
Internal pulldown resistance on TEST
See (2)
2.2 V/3 V
25
60
90
k
(1)
fTCK may be restricted to meet the timing requirements of the module selected.
(2)
TMS, TDI/TCLK, and TCK pullup resistors are implemented in all versions.
JTAG Fuse
(1)
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VCC(FB)
Supply voltage during fuse-blow condition
TA = 25°C
2.5
V
VFB
Voltage level on TEST for fuse blow
6
7
V
IFB
Supply current into TEST during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
(1)
Once the fuse is blown, no further access to the JTAG/Test, Spy-Bi-Wire, and emulation feature is possible, and JTAG is switched to
bypass mode.
66
Copyright
2007–2011, Texas Instruments Incorporated
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