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128Mbx16x32Mobile_2.fm - Rev. L 10/07 EN
48
2001 Micron Technology, Inc. All rights reserved.
128Mb: x16, x32 Mobile SDRAM
Electrical Specifications
Stresses greater than those listed in
Table 12 may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Temperature and Thermal Impedance
It is imperative that the Mobile SDRAM device’s temperature specifications, shown in
operating range to meet data sheet specifications. An important step in maintaining the
proper junction temperature is using the device’s thermal impedances correctly. The
packages being made available. These thermal impedance values vary according to the
density, package, and particular design used for each device.
The SDRAM device’s safe junction temperature range can be maintained when the TC
specification is not exceeded. In applications where the device’s ambient temperature is
too high, use of forced air and/or heat sinks may be required to satisfy the case tempera-
ture specifications.
Table 12:
Absolute Maximum Ratings
Parameter
Min
Max
Rating
Voltage on VDD/VDDQ supply relative to VSS (LC devices)
–1
+4.6
V
Relative to VSS (V devices)
0.5
+3.6
V
Voltage on inputs, NC or I/O pins relative to VSS (LC devices)
–1
+4.6
V
Relative to VSS (V devices)
–0.5
+3.6
V
Operating temperature
TA (commercial)
TA (industrial)
TA (extended)
0
–40
–25
+70
+85
+75
°C
Storage temperature (plastic)
–55
+150
°C