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参数资料
| 型号： | MTB15N06E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 15 AMPERES |
| 中文描述： | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-02, D2PAK-3 |
| 文件页数： | 2/10页 |
| 文件大小： | 231K |
| 代理商： | MTB15N06E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
64
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0)
(VDS = 60 Vdc, VGS = 0, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.9
6.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 7.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 15 Adc)
(ID = 7.5 Adc, TJ = 125
°
C)
Forward Transconductance (VDS
≥
8.0 Vdc, ID = 7.5 Adc)
RDS(on)
VDS(on)
—
0.1
0.12
Ohm
—
—
—
—
2.16
1.8
Vdc
gFS
4.0
6.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
500
700
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0,
—
240
340
Reverse Transfer Capacitance
—
60
120
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.0
)
td(on)
tr
td(off)
tf
QT
—
8.0
16
ns
Rise Time
(VDD = 30 Vdc, ID = 15 Adc,
VGS = 10 Vdc,
—
70
140
Turn–Off Delay Time
—
16
32
Fall Time
—
40
80
Gate Charge
VGS = 10 Vdc)
—
15
35
nC
(VDS = 48 Vdc, ID = 15 Adc,
Q1
Q2
Q3
—
3.0
—
—
8.0
—
—
6.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 15 Adc, VGS = 0)
(IS = 15 Adc, VGS = 0, TJ = 125
°
C)
VSD
—
—
1.1
0.97
1.6
—
Vdc
Reverse Recovery Time
(IS = 15 Adc, VGS = 0,
dIS/dt = 100 A/
μ
s)
trr
—
70
—
ns
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the tab to center of die)
LD
—
3.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.1
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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