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参数资料
| 型号： | MTB15N06E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 15 AMPERES |
| 中文描述： | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-02, D2PAK-3 |
| 文件页数： | 5/10页 |
| 文件大小： | 231K |
| 代理商： | MTB15N06E |
5
Motorola TMOS Power MOSFET Transistor Device Data
Figure 7. Capacitance Variation
1250
1000
750
500
250
0
20
10
10
20
30
VGS
VDS
C
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Ciss
TJ = 25
°
C
Coss
Crss
0
VDS = 0
VGS = 0
Figure 8. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
1
t
VDD = 30 V
ID = 15 A
VGS = 10 V
TJ = 25
°
C
tr
td(on)
td(off)
tf
200
20
2
2
20
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
I
1000
100
10
1
0.10.1
1
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
OPERATION LIMITED IN THIS
AREA BY RDS(on)
100
μ
s
1 ms
10 ms
dc
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
THERMAL LIMIT
PACKAGE LIMIT
RDS(on) LIMIT
200
20
2
0.2
0.2
2
20
Figure 10. Maximum Avalanche Energy versus
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
E
A
110
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
Figure 11. Unclamped Inductive Switching
Test Circuit
Figure 12. Unclamped Inductive Switching Waveforms
t
L
RG
VDS
IL
VDD
tP
BVDSS
VDD
IL(t)
t, (TIME)
10
μ
s
PEAK IL = 15 A
VDD = 25 V
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| MTB15N06V | TMOS POWER FET 15 AMPERES |
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