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参数资料
| 型号： | MTB15N06E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 15 AMPERES |
| 中文描述： | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-02, D2PAK-3 |
| 文件页数： | 3/10页 |
| 文件大小： | 231K |
| 代理商： | MTB15N06E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
Figure 1. On–Region Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance Variation With
Temperature
Figure 5. Gate Charge Test Circuit
SAME
DEVICE
TYPE
AS DUT
Vin
+18 V
VDD
10 V
100 k
0.1
μ
F
FERRITE
BEAD
DUT
100
2N3904
2N3904
47 k
15 V
100 k
Vin = 15 Vpk; PULSE WIDTH
≤
100
μ
s, DUTY CYCLE
≤
10%.
1 mA
47 k
Figure 6. Gate–to–Source and Drain–to–Source
Voltage versus Total Charge
0.2
0.16
0.12
0.08
00
3
6
9
12
ID, DRAIN CURRENT (AMPS)
100
°
C
TJ = 25
°
C
– 55
°
C
15
0.04
V
QT, TOTAL CHARGE (nC)
V
16
20
0
8
12
4
14
12
10
8
0
2
6
4
ID = 15 A
VDS = 48 V
TJ = 25
°
C
Q2
70
60
50
40
10
30
20
Q3
VDS
VGS
20
16
12
8
4
0
2
4
6
8
10
I
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
10 V
9 V
0
8 V
7 V
6 V
0
2
4
6
8
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I
20
16
12
8
4
0
TJ = – 55
°
C
25
°
C
100
°
C
2.2
1.8
1.4
1
– 50
– 25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (
°
C)
0.6
TJ = 25
°
C
VGS = 5 V
VDS
≥
8 V
VGS = 10 V
VGS = 10 V
ID = 15 A
QT
Q1
Figure 2. Transfer Characteristics
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