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参数资料
| 型号： | MTB29N15E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 241K |
| 代理商： | MTB29N15E |
MTB29N15E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
150
151
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 150 Vdc, VGS = 0 Vdc)
(VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.7
5.4
4.0
Vdc
mV/°C
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 14.5 Adc)
RDS(on)
0.054
0.07
Ohms
DraintoSource OnVoltage (VGS = 10 Vdc)
(ID = 29 Adc)
(ID = 14.5 Adc, TJ = 125°C)
VDS(on)
2.4
2.1
Vdc
Forward Transconductance (VDS = 8.6 Vdc, ID = 14.5 Adc)
gFS
10
20
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
2300
3220
pF
Output Capacitance
Coss
450
630
Transfer Capacitance
Crss
130
260
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 75 Vdc, ID = 29 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
19
40
ns
Rise Time
tr
95
190
TurnOff Delay Time
td(off)
90
180
Fall Time
tf
85
170
Gate Charge
(VDS = 120 Vdc, ID = 29 Adc,
VGS = 10 Vdc)
QT
83
120
nC
Q1
12
Q2
37
Q3
23
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 29 Adc, VGS = 0 Vdc)
(IS = 29 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.92
0.84
1.3
Vdc
Reverse Recovery Time
(IS = 29 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
174
ns
ta
126
tb
48
Reverse Recovery Stored
Charge
QRR
1.4
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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