- 您现在的位置：买卖IC网 > PDF目录97628 > MTB29N15E (ON SEMICONDUCTOR) 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTB29N15E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 6/9页 |
| 文件大小： | 241K |
| 代理商： | MTB29N15E |
MTB29N15E
http://onsemi.com
6
I S
,SOURCE
CURRENT
t, TIME
Figure 11. Reverse Recovery Time (trr)
di/dt = 300 A/
μs
Standard Cell Density
High Cell Density
tb
trr
ta
trr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 μs. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RθJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonlinearly with an increase of peak current in avalanche
and peak junction temperature.
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
0.1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
1
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
0.1
dc
1
1000
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
25
TJ, STARTING JUNCTION TEMPERATURE (°C)
100
200
E
AS
,SINGLE
PULSE
DRAINT
OSOURCE
75
0
50
150
100
125
300
400
A
V
ALANCHE
ENERGY
(mJ)
10
10 ms
1 ms
100
ms
ID = 29 A
50
150
450
250
350
10
ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
100
相关PDF资料 |
PDF描述 |
|---|---|
| MTB29N15ET4 | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB30P06VT4 | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTB50N06VLT4 | 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD3N25ET4 | 3 A, 250 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD4N20ET4 | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB29N15ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB2-9PH001 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-9PH001 - Bulk |
| MTB2-9PL1 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-9PL1 - Bulk |
| MTB2-9PL2 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-9PL2 - Bulk |
| MTB2-9PS-01 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-9PS-01 - Bulk |
发布紧急采购，3分钟左右您将得到回复。