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参数资料
| 型号： | MTB29N15E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 241K |
| 代理商： | MTB29N15E |
MTB29N15E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
10
20
60
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
28
0
30
50
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
10
020
0
0.10
0.14
020
10
60
0.07
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus
Drain Current and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
1.5
2.25
0
20
40
160
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100°C
55
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 14.5 A
35
40
60
15 V
50
25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
60
80
100
°C
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
012
5
4
610
30
10
40
60
0.045
0.04
0.5
0
0.1
0.02
30
25
°C
3
7
TJ = 25°C
8 V
9 V
4
20
25
°C
30
50
40
0.05
0.055
0.06
0.065
7 V
6.5 V
VGS = 10 V
5.5 V
5 V
4.5 V
4 V
89
40
50
6 V
67
0.04
0.06
0.08
0.12
TJ = 100°C
25
°C
55
°C
50
2.0
1.75
1.25
0.75
0.25
100
120
140
相关PDF资料 |
PDF描述 |
|---|---|
| MTB29N15ET4 | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB29N15ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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