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参数资料
| 型号： | MTB29N15E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | CASE 418B-03, D2PAK-3 |
| 文件页数： | 7/9页 |
| 文件大小： | 241K |
| 代理商： | MTB29N15E |
MTB29N15E
http://onsemi.com
7
TYPICAL ELECTRICAL CHARACTERISTICS
RθJA(t) = r(t) RθJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) RθJA(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Thermal Response
t, TIME (seconds)
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
1
0.1
D = 0.5
1E05
1E03
1E02
1E01
0.2
0.01
0.02
0.05
0.1
1E+00
1E+01
SINGLE PULSE
1E04
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
Figure 15. Diode Reverse Recovery Waveform
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