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参数资料
| 型号： | MTB2P50E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 2.0 AMPERES 500 VOLTS |
| 中文描述： | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/10页 |
| 文件大小： | 273K |
| 代理商： | MTB2P50E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
0
4
8
12
16
28
0
1
2
3
4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2
3
4
5
6
7
0
1
2
3
4
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
0.5
1.5
2.5
3.5
4
0
4
6
8
10
0
0.5
1.5
2.5
3.5
4
4
4.5
5
5.5
6
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.5
1
1.5
2
0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
200
300
400
500
1
10
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 100
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 1 A
20
24
7 V
8 V
6 V
5 V
4 V
3.5
2.5
1.5
0.5
3.5
2.5
1.5
0.5
2.5
3.5
4.5
5.5
6.5
25
°
C
–55
°
C
2
1
2
3
5.75
5.25
4.75
4.25
1
2
3
VGS = 10 V
15 V
–50
–25
0
50
25
75
100
125
150
50
150
250
350
450
TJ = 125
°
C
25
°
C
100
°
C
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