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参数资料
| 型号： | MTB2P50E |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | TMOS POWER FET 2.0 AMPERES 500 VOLTS |
| 中文描述： | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/10页 |
| 文件大小： | 273K |
| 代理商： | MTB2P50E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
10
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
80
ID = 2 A
1
100
150
t, TIME (ms)
Figure 13. Thermal Response
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (
°
C)
P
Figure 15. D2PAK Power Derating Curve
R
JA = 50
°
C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈
450 mils x 350 mils
60
40
20
1
0.1
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
μ
s
100
μ
s
1 ms
10 ms
dc
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