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| 型号： | MTB30P06VT4 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 30A D2PAK |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 800 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 80nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2190pF @ 25V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
| 其它名称： | MTB30P06VT4OS |
MTB30P06V, MTBV30P06V
Power MOSFET
30 Amps, 60 Volts
P ? Channel D 2 PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
http://onsemi.com
30 AMPERES, 60 VOLTS
R DS(on) = 80 m W
P ? Channel
D
Features
? Avalanche Energy Specified
? I DSS and V DS(on) Specified at Elevated Temperature
? AEC ? Q101 Qualified and PPAP Capable ? MTBV30P06V
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
G
S
D 2 PAK
CASE 418B
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
1
STYLE 2
Source
Gate
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 10 ms)
Drain Current ? Continuous @ 25 ° C
? Continuous @ 100 ° C
? Single Pulse (t p ≤ 10 m s)
Total Power Dissipation @ 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C
(Note 1)
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 10 Vdc, Peak
I L = 30 Apk, L = 1.0 mH, R G = 25 W )
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
? Junction ? to ? Ambient (Note 1)
V DGR
V GS
V GSM
I D
I D
I DM
P D
T J , T stg
E AS
R q JC
R q JA
R q JA
60
± 15
± 25
30
19
105
125
0.83
3.0
? 55 to
175
450
1.2
62.5
50
Vdc
Vdc
Vpk
Adc
Apk
W
W/ ° C
° C
mJ
° C/W
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
MTB
30P06VG
AYWW
1 3
2
Drain
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
Device Package Shipping ?
MTB30P06VG D 2 PAK 50 Units / Rail
(Pb ? Free)
MTB30P06VT4G D 2 PAK 800 / Tape & Reel
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from Case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
(Pb ? Free)
MTBV30P06VT4G D 2 PAK 800 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 5
1
Publication Order Number:
MTB30P06V/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB30P06VT4G | 功能描述:MOSFET PFET D2PAK 60V 30A 80mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTB30SA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB30SAM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB30SAV | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB30SAVM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Full-Size (7.3mm or 4.7mm height) |
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