- 您现在的位置：买卖IC网 > PDF目录98045 > MTB60N05HD (ON SEMICONDUCTOR) 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | MTB60N05HD |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D2PAK-3 |
| 文件页数： | 10/13页 |
| 文件大小： | 161K |
| 代理商： | MTB60N05HD |
MTB60N05HDL
http://onsemi.com
6
I S
,SOURCE
CURRENT
t, TIME
Figure 11. Reverse Recovery Time (trr)
Standard Cell Density
High Cell Density
tb
trr
ta
trr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance –
General Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 s. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) – TC)/(R
θJC).
A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non–linearly with an increase of peak current in avalanche
and peak junction temperature.
Although many E–FETs can withstand the stress of
drain–to–source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
1.0 ms
10 ms
dc
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN-T
O-SOURCE
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
25
175
50
100
150
75
0
600
400
300
200
100
500
0.1
1.0
10
100
1.0
10
100
1000
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 5.0 V
SINGLE PULSE
TC = 25°C
ID = 60 A
125
相关PDF资料 |
PDF描述 |
|---|---|
| MTB60N05HDL | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N05HDG | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N05HDLT4 | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N06HDT4 | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N06HD | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MTB60N05HDL | 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: 制造商:MOTOROLA 功能描述: |
| MTB60N05HDLT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB60N06 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 60 AMPERES 60 VOLTS |
| MTB60N06HD | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK |
| MTB60N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
发布紧急采购，3分钟左右您将得到回复。